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HCP12NK65V |
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| Part Number | HCP12NK65V |
| Manufacturer | SemiHow |
| Description | HCP12NK65V Apr 2014 HCP12NK65V 650V N-Channel Super Junction MOSFET BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust G... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested RoHS Compliant
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25) – Continuous (TC = 100) – P... |
| Document |
 HCP12NK65V Data Sheet
PDF 394.15KB |
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