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TSD2N60MZ |
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| Part Number | TSD2N60MZ |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V • Low gate charge ( typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • ESD improved capability • Improved dv/dt capability G DS D-PAK ( TO-252 ) GD S I-PAK ( TO-251 ) Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage ... |
| Document |
 TSD2N60MZ Data Sheet
PDF 227.53KB |
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Desde 2024. D4U Semiconductor.
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