TSD4N60M |
Part Number | TSD4N60M |
Manufacturer | Truesemi |
Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
Features |
• 2.8A,600V,Max.RDS(on)=2.50 Ω @ VGS =10V • Low gate charge(typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak D... |
Document |
TSD4N60M Data Sheet
PDF 338.89KB |
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