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TSD18N20M |
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| Part Number | TSD18N20M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V • Low gate charge(typical 22nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current TC = 25℃ TC = 100℃ IDM Pulsed Drain Current (Note 1) IAS Single Pulsed Avalanche Current (Note 2) EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Aval... |
| Document |
 TSD18N20M Data Sheet
PDF 422.61KB |
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