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TSB8N65M |
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| Part Number | TSB8N65M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
| Features |
• 7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V • Low gate charge ( typical 29nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2... |
| Document |
 TSB8N65M Data Sheet
PDF 256.33KB |
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Desde 2024. D4U Semiconductor.
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