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BF8205E |
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| Part Number | BF8205E |
| Manufacturer | BYD |
| Description | The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is s... |
| Features |
z VDS =20 V z ID =6A z Low on-state resistance Fast switching
RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A) RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD. z Lead Pb-free and Halogen-free
S1 D1/D2 S2
Absolute Maximum Ratings (Tc = 25℃)
Symbol Parameter VDS Drain-source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-source Voltage PD Power Dissipation (TC = 25°C) TJ,Tstg Operating and Storage Temperature Range
(Note1) (Note2)
(Note1)
Value 20 6 24
±12 1.25 -55 to +150
Unit V A A... |
| Document |
 BF8205E Data Sheet
PDF 385.36KB |
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