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SLP65R190SJ |
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| Part Number | SLP65R190SJ |
| Manufacturer | Maple Semiconductor |
| Description | This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching perfo... |
| Features |
- 20A, 650V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avala... |
| Document |
 SLP65R190SJ Data Sheet
PDF 900.52KB |
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Desde 2024. D4U Semiconductor.
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