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SLD2N60UZ |
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| Part Number | SLD2N60UZ |
| Manufacturer | Maple Semiconductor |
| Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi... |
| Features |
- 1.9A, 600V, RDS(on) = 4.5Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability
D
D
GS
D-PAK
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
S
Symbol
Parameter
SLD2N60UZ / SLU2N60UZ
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC ... |
| Document |
 SLD2N60UZ Data Sheet
PDF 900.85KB |
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