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SLP12N60C |
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| Part Number | SLP12N60C |
| Manufacturer | Maple Semiconductor |
| Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi... |
| Features |
- 12.0A, 600V, RDS(on)typ = 0.51Ω@VGS = 10 V - Low gate charge ( typical 44.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
GDS
TO-220
GDS
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP12N60C SLF12N60C
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
... |
| Document |
 SLP12N60C Data Sheet
PDF 1.31MB |
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Desde 2024. D4U Semiconductor.
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