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SLD4N60C |
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| Part Number | SLD4N60C |
| Manufacturer | Maple Semiconductor |
| Description | This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi... |
| Features |
- 4.5A, 600V, RDS(on) = 2.0Ω(typ)@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
D-PAK
GDS
I-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLD4N60C / SLU4N60C
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)... |
| Document |
 SLD4N60C Data Sheet
PDF 321.23KB |
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Desde 2024. D4U Semiconductor.
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