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MDP12N50 |
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| Part Number | MDP12N50 |
| Manufacturer | MagnaChip |
| Description | The MDP12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP12N50 is suitable device for SMPS, high Speed swi... |
| Features |
VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
G S
TC=25oC TC=100oC
TC=... |
| Document |
 MDP12N50 Data Sheet
PDF 759.75KB |
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Desde 2024. D4U Semiconductor.
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