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MDP10N60G |
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| Part Number | MDP10N60G |
| Manufacturer | MagnaChip |
| Description | These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable de... |
| Features |
VDS = 600V VDS = 660V ID = 10A RDS(ON) ≤ 0.7Ω
Applications
@ Tjmax @ VGS = 10V @ VGS = 10V
Power Supply PFC High Current, High Speed Switching
D
TO-220 MDP Series
TO-220F MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4)
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Junction and Storage Temperature Range * Id limited by maximum junction t... |
| Document |
 MDP10N60G Data Sheet
PDF 1.12MB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | MDP10N60GTH |
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| 2 | MDP10N027 |
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| 3 | MDP10N027TH |
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| 6 | MDP10N055TH |
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Desde 2024. D4U Semiconductor.
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