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RU1H35S |
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| Part Number | RU1H35S |
| Manufacturer | Ruichips |
| Description | TO-263 Applications •Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Sour... |
| Features |
• 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-263 Applications •Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum ... |
| Document |
 RU1H35S Data Sheet
PDF 286.18KB |
Similar Datasheet
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| 1 | RU1H35K |
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Desde 2024. D4U Semiconductor.
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