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RU60E25L |
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| Part Number | RU60E25L |
| Manufacturer | Ruichips |
| Description | TO252 Applications • Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source V... |
| Features |
• 60V/25A, RDS (ON) =35mΩ(Typ.)@VGS=10V RDS (ON) =42mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO252 Applications • Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continu... |
| Document |
 RU60E25L Data Sheet
PDF 281.03KB |
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Desde 2024. D4U Semiconductor.
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