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MDP1922 |
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| Part Number | MDP1922 |
| Manufacturer | MagnaChip |
| Description | The MDP1922 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1922 is suitable device for DC/DC ... |
| Features |
VDS = 100V
ID = 97A @VGS = 10V
RDS(ON)
< 8.4 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
GDS
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current
TC=25oC TC=100oC
Power Dissipation Single Pulse Avalanche Energy
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Jul. 2021. Rev 1.6
1
G S
Symbol VDSS VGSS ID IDM PD EAS(2) TJ, Tstg
Symbol RθJA... |
| Document |
 MDP1922 Data Sheet
PDF 1.02MB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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