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CEP110P03 |
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| Part Number | CEP110P03 |
| Manufacturer | CET |
| Description | CEP110P03/CEB110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.5mΩ @VGS = -4.5V. Super high dense cell design for... |
| Features |
-30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.5mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e Operating and Store Temper... |
| Document |
 CEP110P03 Data Sheet
PDF 397.01KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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