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MT3055L |
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| Part Number | MT3055L |
| Manufacturer | MOS-TECH |
| Description | Mos-Tech Semiconductor Co.,LTD. MT3055L N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ... |
| Features |
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 25V 15A 55 @ VGS=4.5V 60 @ VGS=2.5V NOTE：The MT3055L is available in a lead-free package S GG D S D G S ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit 25 ±12 15 - Pulse d b IDM 48 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 1.7 ... |
| Document |
 MT3055L Data Sheet
PDF 248.84KB |
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Desde 2024. D4U Semiconductor.
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