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WFF12N65S |
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| Part Number | WFF12N65S |
| Manufacturer | Winsemi |
| Description | Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power d... |
| Features |
� Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃)
General Description
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID I DM
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Drain Current Pulsed 1)
VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IA... |
| Document |
 WFF12N65S Data Sheet
PDF 384.97KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WFF12N65 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
| 2 | WFF12N65L |
Winsemi |
Silicon N-Channel MOSFET |
|
| 3 | WFF12N60 |
Wisdom technologies |
N-Channel MOSFET |
|
| 4 | WFF12N60 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
| 5 | WFF12N70S |
Winsemi |
Power MOSFET |
|
| 6 | WFF1201 |
BOSCH |
(WFF1xx1) GB Directions for Use |
|
Desde 2024. D4U Semiconductor.
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