WFF4N60 |
Part Number | WFF4N60 |
Manufacturer | Winsemi |
Description | This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche... |
Features |
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
WFF4N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast.
Abs... |
Document |
WFF4N60 Data Sheet
PDF 643.05KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | WFF4N60 |
Wisdom technologies |
N-Channel MOSFET | |
2 | WFF4N60C |
Winsemi |
Silicon N-Channel MOSFET | |
3 | WFF4N65 |
Wisdom technologies |
N-Channel MOSFET | |
4 | WFF4N65L |
Winsemi |
Silicon N-Channel MOSFET | |
5 | WFF4N65S |
Winsemi |
650V Super-Junction Power MOSFET | |
6 | WFF |
Welwyn Components Limited |
Fast Fusible Metal Film Resistors |