WFU5N65L |
Part Number | WFU5N65L |
Manufacturer | Winsemi |
Description | Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature ... |
Features |
� 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor... |
Document |
WFU5N65L Data Sheet
PDF 381.18KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | WFU5N60 |
Wisdom technologies |
HIGH VOLTAGE N-Channel MOSFET | |
2 | WFU5N60 |
Winsemi |
Silicon N-Channel MOSFET | |
3 | WFU5N60B |
Winsemi |
Silicon N-Channel MOSFET | |
4 | WFU5N50 |
Winsemi |
Silicon N-Channel MOSFET | |
5 | WFU1N60 |
Winsemi |
Silicon N-Channel MOSFET | |
6 | WFU1N60C |
Winsemi |
Power MOSFET |