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WFF8N60B |
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| Part Number | WFF8N60B |
| Manufacturer | Winsemi |
| Description | Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � M... |
| Features |
� 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power suppl... |
| Document |
 WFF8N60B Data Sheet
PDF 269.33KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WFF8N60 |
Wisdom technologies |
HIGH VOLTAGE N-Channel MOSFET |
|
| 2 | WFF8N60 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
| 3 | WFF8N60C |
Winsemi |
Silicon N-Channel MOSFET |
|
| 4 | WFF8N65B |
Winsemi |
Silicon N-Channel MOSFET |
|
| 5 | WFF8N65L |
Winsemi |
Silicon N-Channel MOSFET |
|
| 6 | WFF8N80 |
Wisdom technologies |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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