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WFD5N60B |
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| Part Number | WFD5N60B |
| Manufacturer | Winsemi |
| Description | Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(15... |
| Features |
� 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correct... |
| Document |
 WFD5N60B Data Sheet
PDF 241.48KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WFD5N60 |
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| 2 | WFD5N65L |
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| 3 | WFD5N65L |
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| 4 | WFD5N50 |
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| 5 | WFD20N06 |
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| 6 | WFD2N60 |
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Desde 2024. D4U Semiconductor.
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