TC58BVG0S3HBAI6 |
Part Number | TC58BVG0S3HBAI6 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | The TC58BVG0S3HBAI6 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The ... |
Features |
• Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 1004 blocks Max 1024 blocks • Power supply VCC = 2.7V to 3.6V • Access time Cell array to register 40 µs typ. Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Program Auto Block Erase 330 µs/page typ. 2.5 ms/block typ. • Operating current Read (25 ns cycle) Program (... |
Document |
TC58BVG0S3HBAI6 Data Sheet
PDF 313.56KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TC58BVG0S3HBAI4 |
Toshiba |
1 GBIT (128M x 8 BIT) CMOS NAND E2PROM | |
2 | TC58BVG0S3HTA00 |
Toshiba |
1 GBIT (128M x 8 BIT) CMOS NAND E2PROM | |
3 | TC58BVG0S3HTAI0 |
Toshiba |
1 GBIT (128M x 8-BIT) CMOS NAND E2PROM | |
4 | TC58BVG1S3HBAI4 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM | |
5 | TC58BVG1S3HBAI6 |
Toshiba |
2G-BIT (256M x 8 BIT) CMOS NAND E2PROM | |
6 | TC58BVG1S3HTA00 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |