TC58BVG2S0HBAI6 |
Part Number | TC58BVG2S0HBAI6 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. The... |
Features |
• Organization x8 Memory cell array 4224 × 128K × 8 Register 4224 × 8 Page size 4224 bytes Block size (256K + 8K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 2008 blocks Max 2048 blocks • Power supply VCC = 2.7V to 3.6V • Access time Cell array to register 55 µs typ. (Single Page Read) / 90µs typ. (Multi Page Read) Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Pro... |
Document |
TC58BVG2S0HBAI6 Data Sheet
PDF 357.47KB |
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