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P9006ETF |
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| Part Number | P9006ETF |
| Manufacturer | UNIKC |
| Description | P9006ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60 90mΩ @VGS = 10V ID -15A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CO... |
| Features |
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State Resistance1 Forward Transconductance1
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = -250mA VDS = VGS, ID = -250mA VDS = 0V, VGS = ±20V VDS = -48V, VGS = 0V VDS = -40V, VGS = 0V , TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID = -6A VGS = -10V, ID = -18A
VDS = -5V, ID = -18A
-60 -1.0 -1.8 -3.0
±250 1 10
-60 79 135 63 90 20
DYNAMIC
Input Capacitance Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -25V, f = 1MHz
... |
| Document |
 P9006ETF Data Sheet
PDF 341.73KB |
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