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P1060ETF |
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| Part Number | P1060ETF |
| Manufacturer | UNIKC |
| Description | P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.77Ω @VGS = 10V 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Not... |
| Features |
°C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Gate Voltage Drain Current
Drain-Source On-State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
RDS(ON) gfs
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA
600 V
2 2.9 4
VDS = 0V, VGS = ±30V
±100 nA
VDS = 600V, VGS = 0V , TC = 25 °C VDS =480V, VGS = 0V, TC = 100°C
1 mA
10
VGS = 10V, ID = 5A
0.57 0.77 Ω
VDS =15V, ID = 5A
15
S
DYNAMIC
Input Capacitance
Ciss
1552
Output Capacitance
Coss
VGS = 0V,... |
| Document |
 P1060ETF Data Sheet
PDF 850.05KB |
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