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P1006BT |
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| Part Number | P1006BT |
| Manufacturer | UNIKC |
| Description | P1006BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10mΩ @VGS = 10V 61A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST COND... |
| Features |
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS VGS(th) IGSS
IDSS
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V VDS =48V, VGS = 0V VDS =40V, VGS = 0V, TJ = 125°C
60 V
1.3 1.7 2.3 ±100 nA 1 mA 10
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON) gfs
VGS = 4.5V, ID = 20A VGS =10V, ID = 20A VDS =10V, ID = 20A
8.2 13 mΩ
6.8 10
60
S
DYNAMIC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Total Gate Charge2
Gate-Source Charge2 Gate-Drain Charge2 ... |
| Document |
 P1006BT Data Sheet
PDF 453.42KB |
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