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TMM2018AD-25 |
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| Part Number | TMM2018AD-25 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA MOS MEMORY PRODUCT 2,048 WORD X 8 BIT STATIC RAM SI LICON MONOLITH IC N-CHANNEL SILICON GATE MOS PROCESS TMM2018AO-25, TMM2018AO-35 TMM2018AO-45 IOESCRI PTI ONI The TMM2018AD is a 16,384 bi... |
| Features |
with a maximum access time of 25ns/35ns/45ns and maximum operating current of 150mA/135mA/135mA. When ~ goes high, the device is deselected and placed in a low power standby mode in which maximum standby current is 20mA. Thus the TMM2018AD is most suitable for use in cache memory and high speed storage. The ~12018AD is offered in a 24 pin standard cerdip package with 0.3 inch width for high density assembly. The T}~12018AD is fabricated with ion implanted N channel silicon gate MOS technology for high performance and high reliability.
IFEATURESI
• Fast access time tACC... |
| Document |
 TMM2018AD-25 Data Sheet
PDF 203.31KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TMM2018AD-35 |
Toshiba |
STATIC RAM |
|
| 2 | TMM2018AD-45 |
Toshiba |
STATIC RAM |
|
| 3 | TMM2018AD |
Toshiba |
STATIC RAM |
|
| 4 | TMM2018AP |
Toshiba |
16K-Bit RAM |
|
| 5 | TMM2018AP-25 |
Toshiba |
16K-Bit RAM |
|
| 6 | TMM2018AP-35 |
Toshiba |
16K-Bit RAM |
|
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