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FQA13N80_F109 |
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| Part Number | FQA13N80_F109 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A • Low Gate Charge (Typ. 68 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source ... |
| Document |
 FQA13N80_F109 Data Sheet
PDF 1.99MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQA13N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 2 | FQA13N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 3 | FQA13N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 4 | FQA13N50CF |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 5 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 6 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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