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FQB34P10 |
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| Part Number | FQB34P10 |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• -33.5 A, -100 V, RDS(on) = 60 mΩ (Max.) @ VGS = .10 V, ID = -16.75 A • Low Gate Charge (Typ. 85 nC) • Low Crss (Typ. 170 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating S G S D D2-PAK G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = ... |
| Document |
 FQB34P10 Data Sheet
PDF 1.83MB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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