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FDG8842CZ |
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| Part Number | FDG8842CZ |
| Manufacturer | Fairchild Semiconductor |
| Description | These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially t... |
| Features |
Q1: N-Channel
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel
Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th) <1.5V) Very small package outline SC70-6 General Description These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-sta... |
| Document |
 FDG8842CZ Data Sheet
PDF 455.63KB |
Desde 2024. D4U Semiconductor.
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