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FDN86501LZ |
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| Part Number | FDN86501LZ |
| Manufacturer | Fairchild Semiconductor |
| Description | Shielded Gate MOSFET Technology Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) H... |
| Features |
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL tested
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Applications
Primary DC-DC Swit... |
| Document |
 FDN86501LZ Data Sheet
PDF 593.69KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDN86501LZ |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FDN8601 |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDN8601 |
TY Semiconductor |
N-Channel MOSFET |
|
| 4 | FDN8601 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDN86246 |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FDN86246 |
ON Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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