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FDC610PZ |
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| Part Number | FDC610PZ |
| Manufacturer | Fairchild Semiconductor |
| Description | August 2007 tm Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A Low gate charge (17nC typical). High performance trench technology for extremely low... |
| Features |
General Description
August 2007
tm
Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A Low gate charge (17nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM –6 package: small footprint (72% smaller than standard SO –8) low profile (1mm thick). RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are... |
| Document |
 FDC610PZ Data Sheet
PDF 421.62KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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