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FDME820NZT |
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| Part Number | FDME820NZT |
| Manufacturer | Fairchild Semiconductor |
| Description | This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Applications Li-lon ... |
| Features |
Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level >2.5 kV (Note3)
RoHS Compliant
General Description
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe.
Applications
Li-lon Battery Pack Baseband Switch Load Switch DC-... |
| Document |
 FDME820NZT Data Sheet
PDF 256.53KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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