FDMC8010ET30 |
Part Number | FDMC8010ET30 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for ap... |
Features |
Extended TJ rating to 175°C
Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
January 2015
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Applications
DC -... |
Document |
FDMC8010ET30 Data Sheet
PDF 330.99KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDMC8010ET30 |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDMC8010 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
3 | FDMC8010 |
ON Semiconductor |
N-Channel MOSFET | |
4 | FDMC8010DC |
Fairchild Semiconductor |
N-Channel Dual Cool 33 PowerTrench MOSFET | |
5 | FDMC8010DC |
ON Semiconductor |
N-Channel MOSFET | |
6 | FDMC8015L |
Fairchild Semiconductor |
MOSFET |