FDMC510P |
Part Number | FDMC510P |
Manufacturer | Fairchild Semiconductor |
Description | This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching performance and ruggedness. Applications Battery Manag... |
Features |
Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
HBM ESD capability level >2 KV typical (Note 4)
June 2014
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that ha... |
Document |
FDMC510P Data Sheet
PDF 262.94KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDMC510P |
ON Semiconductor |
P-Channel MOSFET | |
2 | FDMC5614P |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
3 | FDMC5614P |
ON Semiconductor |
P-Channel MOSFET | |
4 | FDMC5614P-L701 |
ON Semiconductor |
P-Channel MOSFET | |
5 | FDMC007N30D |
ON Semiconductor |
Dual N-Channel MOSFET | |
6 | FDMC008N08C |
ON Semiconductor |
N-Channel MOSFET |