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FDMC86139P |
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| Part Number | FDMC86139P |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSF... |
| Features |
General Description
Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
This product is optimised for fast switching applications as well as load switch applications
100% UIL Tested RoHS Compliant
Applications
Active Clamp S... |
| Document |
 FDMC86139P Data Sheet
PDF 340.20KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMC86139P |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDMC86102 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 3 | FDMC86102 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDMC86102L |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDMC86102L |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FDMC86102LZ |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
Desde 2024. D4U Semiconductor.
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