FDMC86102L |
Part Number | FDMC86102L |
Manufacturer | Fairchild Semiconductor |
Description | Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS Compliant This N-Channel ... |
Features |
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
DC - DC Conversion
Top Bottom
Pin 1
SS S G
S S
D D
MLP 3.3x3.3
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise n... |
Document |
FDMC86102L Data Sheet
PDF 332.86KB |
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