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FDMC7572S |
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| Part Number | FDMC7572S |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky B... |
| Features |
General Description
Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
100% UIL Tested
RoHS Compliant
The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Applications
... |
| Document |
 FDMC7572S Data Sheet
PDF 272.32KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMC7570S |
Fairchild Semiconductor |
N-Channel Power Trench SyncFET |
|
| 2 | FDMC7570S |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDMC7582 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDMC7200 |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 5 | FDMC7200 |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFETs |
|
| 6 | FDMC7200S |
ON Semiconductor |
Dual N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|