D882M |
Part Number | D882M |
Manufacturer | JCET |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise no... |
Features |
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 40 30 5 3 1.25 150
-55-150
Unit V V V A W
℃ ℃
1. BASE 2. COLLECTOR 3 .EMITTER
ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified )
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off cur... |
Document |
D882M Data Sheet
PDF 586.88KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | D882 |
MCC |
NPN Silicon Plastic-Encapsulate Transistor | |
2 | D882 |
NEC |
NPN SILICON POWER TRANSISTOR | |
3 | D882 |
AiT Semiconductor |
NPN TRANSISTORS | |
4 | D882 |
SavantIC |
Silicon NPN Power Transistor | |
5 | D882 |
UTC |
NPN SILICON TRANSISTOR | |
6 | D882 |
STMicroelectronics |
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