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D882M-G |
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| Part Number | D882M-G |
| Manufacturer | Comchip |
| Description | General Purpose Transistors D882M-G RoHS Device Features - Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage. Diagram - 1. BASE - 2. COLLECT... |
| Features |
- Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage.
Diagram
- 1. BASE - 2. COLLECTOR - 3. EMITTER
2
C
1
B
E
3
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector power dissipation Junction temperature range
VCBO VCEO VEBO
IC PC TJ
40 V 30 V 6V 3A 1.25 W 150 °C
Storage temperature range
TSTG
-55 to +150 °C
TO-252-2L
0.264(6.70) 0.256(6.50) 0.215(5.46) 0.202(5.13)
0.409(10.40) 0.386( 9.80)
... |
| Document |
 D882M-G Data Sheet
PDF 177.42KB |
Desde 2024. D4U Semiconductor.
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