3DD13005ND86 |
Part Number | 3DD13005ND86 |
Manufacturer | JCET |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 3DD13005ND86 TRANSISTOR (NPN) TO-220-3L FEATURES z Power switching applications z Low saturation voltage... |
Features |
z Power switching applications z Low saturation voltage z High speed switching
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE 2. COLLECTOR 3. EMITTER
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value
700 420
9 4 2 150 -55-150
Unit
V V V A W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage ... |
Document |
3DD13005ND86 Data Sheet
PDF 210.73KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 3DD13005ND66 |
JCET |
NPN Transistor | |
2 | 3DD13005ND66F |
JCET |
NPN Transistor | |
3 | 3DD13005N7D |
Huajing Microelectronics |
Silicon NPN Transistor | |
4 | 3DD13005N8D |
Huajing Microelectronics |
Silicon NPN Transistor | |
5 | 3DD13005 |
Jiangsu Changjiang Electronics |
TRANSISTOR | |
6 | 3DD13005 |
TRANSYS Electronics |
Plastic-Encapsulated Transistors |