SSH10N80A |
Part Number | SSH10N80A |
Manufacturer | Fairchild Semiconductor |
Title | N-CHANNEL POWER MOSFET |
Features |
• Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA (Max.) @ VDS = 800V • Lower RDS(ON): 0.746Ω (Typ.) ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TST... |
Document |
SSH10N80A Data Sheet
PDF 251.68KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSH10N80 |
Samsung |
(SSH10N70 / SSH10N80) N-Channel Power MOSFETs | |
2 | SSH10N80A |
Samsung |
Advanced Power MOSFET | |
3 | SSH10N60A |
Fairchild |
advanced power MOSFET | |
4 | SSH10N60B |
Fairchild |
600V N-Channel MOSFET | |
5 | SSH10N70 |
Samsung |
N-Channel Power MOSFETs | |
6 | SSH10N90A |
Samsung Electronics |
Advanced Power MOSFET |