MS1453 Advanced Power Technology RF & MICROWAVE TRANSISTORS Datasheet. existencias, precio

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MS1453

Advanced Power Technology
MS1453
MS1453 MS1453
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Part Number MS1453
Manufacturer Advanced Power Technology
Description The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ABSOLUTE...
Features
• 800-900 MHz
• 24 VOLTS
• COMMON EMITTER
• GOLD METALIZATION
• INTERNAL INPUT MATCHING
• CLASS AB LINEAR OPERATION
• POUT = 30 W MIN. WITH 7.5 dB GAIN MS1453 DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCES VEBO IC PDISS TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature TSTG Storage Temperat...

Document Datasheet MS1453 Data Sheet
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