MS1451 Advanced Power Technology RF & MICROWAVE TRANSISTORS Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

MS1451

Advanced Power Technology
MS1451
MS1451 MS1451
zoom Click to view a larger image
Part Number MS1451
Manufacturer Advanced Power Technology
Description The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in cellular base station applications. The MS1451 is designed as a medium power output dev...
Features
• 800-960 MHz
• 24 VOLTS
• CLASS AB LINEAR OPERATION
• POUT = 15 WATTS
• GP = 8.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in cellular base station applications. The MS1451 is designed as a medium power output device or as the driver for MS1452. Diffused emitter ballast resistors provide thermal stability and reliability under Class AB linear operation. MS1451 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VCES VEBO PDISS IC TJ Parameter Collector-Base Voltag...

Document Datasheet MS1451 Data Sheet
PDF 92.00KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 MS1451
TE
piezoresistive silicon pressure sensor Datasheet
2 MS1452
Advanced Power Technology
RF & MICROWAVE TRANSISTORS Datasheet
3 MS1453
Advanced Power Technology
RF & MICROWAVE TRANSISTORS Datasheet
4 MS1454
Advanced Power Technology
RF & MICROWAVE TRANSISTORS Datasheet
5 MS1455
Advanced Power Technology
RF & MICROWAVE TRANSISTORS Datasheet
6 MS14
Pan Jit International
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Datasheet
More datasheet from Advanced Power Technology
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad