MS1451 |
Part Number | MS1451 |
Manufacturer | Advanced Power Technology |
Description | The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in cellular base station applications. The MS1451 is designed as a medium power output dev... |
Features |
• 800-960 MHz • 24 VOLTS • CLASS AB LINEAR OPERATION • POUT = 15 WATTS • GP = 8.0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in cellular base station applications. The MS1451 is designed as a medium power output device or as the driver for MS1452. Diffused emitter ballast resistors provide thermal stability and reliability under Class AB linear operation. MS1451 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VCES VEBO PDISS IC TJ Parameter Collector-Base Voltag... |
Document |
MS1451 Data Sheet
PDF 92.00KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MS1451 |
TE |
piezoresistive silicon pressure sensor | |
2 | MS1452 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
3 | MS1453 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
4 | MS1454 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
5 | MS1455 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
6 | MS14 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |