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3CG640 |
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| Part Number | 3CG640 |
| Manufacturer | Qunli Electric |
| Description | Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG640, 3CG708 PNP Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology struct... |
| Features |
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. Make up push pull amplifying circuit with NPN. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols
Total Dissipation Max. Collector Current
Ptot ICM
Junction Temperature
Tjm
Storage Temperature
Tstg
C-E Breakdown Voltage E-B Breakdown Voltage
V(BR)CEO V(BR)EBO
Collector- Emitt... |
| Document |
 3CG640 Data Sheet
PDF 29.89KB |
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