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HCS60R350T |
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| Part Number | HCS60R350T |
| Manufacturer | SemiHow |
| Description | HCS60R350T Super Junction MOSFET Jan 2016 HCS60R350T 600V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity ... |
| Features |
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 650 11 0.35 17.5
Unit V A ȍ nC
Application
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) TV power & LED Lighting Power
Package & Internal Circuit
TO-220F
G D S
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS PD TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain... |
| Document |
 HCS60R350T Data Sheet
PDF 199.04KB |
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Desde 2024. D4U Semiconductor.
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