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BSC046N10NS3G |
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| Part Number | BSC046N10NS3G |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) ... |
| Features |
• Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSC046N10NS3 G Product Summary VDS RDS(on),max ID 100 V 4.6 mW 100 A PG-TDSON-8 Type BSC046N10NS3 G Package PG-TDSON-8 Marking 046N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Co... |
| Document |
 BSC046N10NS3G Data Sheet
PDF 553.26KB |
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Desde 2024. D4U Semiconductor.
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