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AUIRF1010EZS |
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| Part Number | AUIRF1010EZS |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t... |
| Features |
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient a... |
| Document |
 AUIRF1010EZS Data Sheet
PDF 741.84KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AUIRF1010EZ |
Infineon |
Power MOSFET |
|
| 2 | AUIRF1010EZ |
International Rectifier |
Power MOSFET |
|
| 3 | AUIRF1010EZL |
Infineon |
Power MOSFET |
|
| 4 | AUIRF1010EZL |
International Rectifier |
Power MOSFET |
|
| 5 | AUIRF1010EZS |
International Rectifier |
Power MOSFET |
|
| 6 | AUIRF1010Z |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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