CS3N50B4HY |
Part Number | CS3N50B4HY |
Manufacturer | Huajing Microelectronics |
Description | VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching... |
Features |
l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of electron ballast and adaptor
Absolute(Tc= 25℃otherwise specified Unless)
Symbol Parameter
VDSS
Drain-to-Source Voltage
ID
IDMa1
VGS EAS a2 EAR a1 IAR a1 dv/dt a3
Continuous Drain Current Continuous Drain Current TC = 100 °C ... |
Document |
CS3N50B4HY Data Sheet
PDF 250.13KB |
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